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m28f008 ? 2013 rochester electronics, llc. all rights reserved 04242013 specifcation number 28f008-m (i) rev c table 5 specification number 28f008-m (i) rev - page 1 of 13 rochester electronics guarantees performance of its semiconductor products to the original oem specifcations. typical values are for reference purposes only. certain minimum or maximum ratings may be based on product characterization, design, simulation, or sample testing. rochester electronics reserves the right to make changes without further notice to any specifcation herein. for complete rochester ordering guide, please refer to page 2 please contact factory for specifc package availability and military/aerospace specifcations/availability. the m28f008 8-mbit flashfile memory is the highest density nonvolatile read/write solution for solid state storage. the m28f008s extended cycling, symmetrically blocked architecture, fast access time, write automation and low power consumption provide a more reliable, lower power, lighter weight and higher performance alternative to traditional rotating disk technology. the m28f008 brings new capabilities to portable computing. application and operating system software stored in resident fash memory arrays provide instant- on, rapid execute-in-place and protection from obsolescence through in-system software updates. resident software also extends system battery life and increases reliability by reducing disk drive accesses. for high-density data acquisition applications, the m28f008 offers a more cost-effective and reliable alternative to sram and battery. traditional high density embedded applications, such as telecommunications, can take advantage of the m28f008s nonvolatility, blocking and minimal system code requirements for fexible frmware and modular software designs. the m28f008 is offered in 40-lead sidebrazed dip and 42-lead flatpack packages. this device uses an integrated command user interface and state machine for simplifed block erasure and byte write. the m28f008 memory map consists of 16 separately erasable 64 kbyte blocks. the m28f008 employs advanced cmos circuitry for systems requiring low power consumption and noise immunity. its 100 ns access time provides superior performance when compared with magnetic storage media. a deep powerdown mode lowers power consumption to 500 ? w maximum thru v cc . the rp power control input also provides absolute data protection during system powerup/down. page 1 of 14
page 2 of 14 rochester part number intel part number package temperature mc28f008-10/b mc28f008-10 cdip-40 -55 to +125c mc28f008-12/b mc28f008-12 cdip-40 -55 to +125c MF28F008-10/b MF28F008-10 fp-42, ceramic -55 to +125c mf28f008-12/b mf28f008-12 fp-42, ceramic -55 to +125c rochester ordering guide *most products can also be offered as rohs compliant, designated by a Cg suffx. please contact factory for more information. m28f008 specifcation number 28f008-m (i) rev c
page 3 of 14 table 5 specification number 28f008-m (i) rev - page 2 of 13 m28f008 specifcation number 28f008-m (i) rev c
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page 14 of 14 table 5 specification number 28f008-m (i) rev - page 13 of 13 rochester electronics guarantees performance of its semiconductor products to the original oem specifcations. typical values are for reference purposes only. certain minimum or maximum ratings may be based on product characterization, design, simulation, or sample testing. rochester electronics reserves the right to make changes without further notice to any specifcation herein. m28f008 specifcation number 28f008-m (i) rev c

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